{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["026:00"], "contactPoint": {"@type": "vcard:Contact", "fn": "Jose Celaya Galvan", "hasEmail": "mailto:jose.r.celayagalvan@nasa.gov"}, "description": "Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capaci- tance-voltage (C-V) measurements as a result of trapped charge in the gate oxide. The collector-emitter ON voltage V_CE(ON) showed a reduction with aging. The reduction in the V_CE(ON) was found to be correlated to die attach degradation, as observed by scan- ning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor parameters will enable the development of a prognostic methodology for IGBT failure. The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.", "distribution": [{"@type": "dcat:Distribution", "description": "Full paper PDF", "downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/04967915.pdf", "format": "PDF", "mediaType": "application/pdf", "title": "04967915.pdf"}], "identifier": "DASHLINK_895", "issued": "2014-01-16", "keyword": ["ames", "dashlink", "nasa"], "landingPage": "https://c3.nasa.gov/dashlink/resources/895/", "modified": "2025-03-31", "programCode": ["026:029"], "publisher": {"@type": "org:Organization", "name": "Dashlink"}, "title": "Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics"}