{"@type": "dcat:Dataset", "DOI": "10.15121/1157514", "accessLevel": "public", "bureauCode": ["019:20"], "contactPoint": {"@type": "vcard:Contact", "fn": "Gregorz Gilbert Cieslewski", "hasEmail": "mailto:ggciesl@sandia.gov"}, "dataQuality": true, "description": "Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.", "distribution": [{"@type": "dcat:Distribution", "accessURL": "https://gdr.openei.org/files/441/sic_diode_test_data.xlsx", "description": "Excel Spreadsheet containing data from SiC diode test (IV curves)", "format": "xlsx", "mediaType": "application/vnd.openxmlformats-officedocument.spreadsheetml.sheet", "title": "SiC Diode Test Data.xlsx"}], "identifier": "https://data.openei.org/submissions/6752", "issued": "2014-08-01T06:00:00Z", "keyword": ["geothermal", "SiC", "diode", "test", "high temp", "egs"], "landingPage": "https://gdr.openei.org/submissions/441", "license": "https://creativecommons.org/licenses/by/4.0/", "modified": "2017-08-08T22:12:40Z", "programCode": ["019:006"], "projectLead": "Lauren Boyd", "projectNumber": "FY14 AOP 1.1.5.1", "publisher": {"@type": "org:Organization", "name": "Sandia National Laboratories"}, "spatial": "{\"type\":\"Polygon\",\"coordinates\":[[[-123.25410625,35.586078228934],[-119.39800625,35.586078228934],[-119.39800625,39.702331271134],[-123.25410625,39.702331271134],[-123.25410625,35.586078228934]]]}", "title": "SiC Diode Test Data"}