{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["006:55"], "contactPoint": {"fn": "Bryan Barnes", "hasEmail": "mailto:bryan.barnes@nist.gov"}, "description": "An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry.  Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry.  Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results.  Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files.", "distribution": [{"downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt", "mediaType": "text/plain"}, {"downloadURL": "https://data.nist.gov/od/ds/6A4A339C5C091C09E053245706817F211916/README.txt.sha256", "mediaType": "text/plain"}, {"accessURL": "https://doi.org/10.18434/T4/1500937", "description": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method", "format": "text/html", "title": "DOI Access to Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method"}], "identifier": "6A4A339C5C091C09E053245706817F211916", "keyword": ["finite-difference time-domain", "FDTD", "electromagnetic simulation", "pattered defect inspection", "defects", "simulation input"], "landingPage": "https://data.nist.gov/od/id/6A4A339C5C091C09E053245706817F211916", "language": ["en"], "license": "https://www.nist.gov/open/license", "modified": "2018-04-20", "programCode": ["006:045"], "publisher": {"@type": "org:Organization", "name": "National Institute of Standards and Technology"}, "theme": ["Metrology:Dimensional metrology", "Manufacturing:Process measurement and control", "Nanotechnology:Nanoelectronics"], "title": "Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method"}