{"@type": "dcat:Dataset", "accessLevel": "public", "accrualPeriodicity": "irregular", "bureauCode": ["026:00"], "contactPoint": {"@type": "vcard:Contact", "fn": "Jose Celaya Galvan", "hasEmail": "mailto:jose.r.celayagalvan@nasa.gov"}, "description": "The prognostic technique for a power MOSFET presented\r\nin this paper is based on accelerated aging of MOSFET\r\nIRF520Npbf in a TO-220 package. The methodology utilizes\r\nthermal and power cycling to accelerate the life of the devices.\r\nThe major failure mechanism for the stress conditions is die attachment\r\ndegradation, typical for discrete devices with lead free\r\nsolder die attachment. It has been determined that die attach\r\ndegradation results in an increase in ON-state resistance\r\ndue to its dependence on junction temperature. Increasing\r\nresistance, thus, can be used as a precursor of failure for the\r\ndie-attach failure mechanism under thermal stress. A feature\r\nbased on normalized ON-resistance is computed from in-situ\r\nmeasurements of the electro-thermal response. An Extended\r\nKalman filter is used as a model-based prognostics techniques\r\nbased on the Bayesian tracking framework.", "distribution": [{"@type": "dcat:Distribution", "description": "Full paper PDF", "downloadURL": "https://c3.nasa.gov/dashlink/static/media/publication/RAMS-12_MOSFET_Final.pdf", "format": "PDF", "mediaType": "application/pdf", "title": "RAMS-12 MOSFET Final.pdf"}], "identifier": "DASHLINK_857", "issued": "2013-12-12", "keyword": ["ames", "dashlink", "nasa"], "landingPage": "https://c3.nasa.gov/dashlink/resources/857/", "modified": "2025-03-31", "programCode": ["026:029"], "publisher": {"@type": "org:Organization", "name": "Dashlink"}, "title": "Prognostics Approach For Power Mosfet Under Thermal-Stress Aging"}