TAS24A_Fig4b.txt
URL: https://data.nist.gov/od/ds/mds2-3248/TAS24A_Fig4b.txt
Data used in Figure 4 of [1]. Time domain reflectometry (TDR) measurements of the system showing system characteristic impedance versus time/distance (a) are used to determine changes in the electrical length of the chip as a function of dc bias current based on a sharp feature at the transition off of the chip (b). This change is a direct, independent measurement of the quadratic nonlinearity coefficient of the inductance (c). See [1] for additional information.
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